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The impact of layout parameters on the steady-state thermal behavior of bipolar junction transistors (BJTs) with full dielectric isolation is extensively analyzed by accurate DC measurements and 3-D numerical simulations.
The thermal behavior of bipolar junction transistors (BJTs) with full dielectric isolation is investigated in both time and frequency domain by means of thermal impedance measurements and calibrated electrothermal simulations.
In this paper, a half bridge convert driver IC with novel common mode rejection technique is designed and implemented in 1.0 μm high voltage (650 V) Dielectric Isolation MOS (DIMOS) process.
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To provide efficient protection against these EMC requirements, two major automotive process technologies namely, full-dielectric isolation or silicon on insulator (SOI) and junction isolation (JI), are compared with respect to the leakage current, latch-up immunity, design complexity, EMC handling capability and cost.
Metal-filled TSV needs a dielectric layer for sufficient electrical isolation to the surrounding Si substrate.
A trench isolation technology employs trenches refilled with dielectric material to create, in a single layer, electrical isolation between mechanically joined components.
The simple dielectric interface between detector and readout provides vacuum isolation and no vacuum electrical feed-throughs are required.
This contribution reviews the fabrication, characterization and active vibration isolation performance of a core-free rolled tubular dielectric elastomer (DE) actuator, which has been designed and developed by Danfoss PolyPower A/S.
To this end, an innovative planarization method to realize the source to gate isolation spacer was developed using the HSQ as a dielectric material [21].
Moreover, wide bandgap and high resistivity accompanied with high dielectric constant make it a very good choice for substrate, which causes isolation between the substrate and circuits.
SPDT having SiO2 dielectric layer shows insertion loss of 0.35 dB, return loss of 26.4 dB and isolation of 45.1 dB at 10 GHz, whereas SPDT having HfO2 dielectric layer shows insertion loss of 0.08 dB, return loss of 35.7 dB and isolation of 48.8 dB at 10 GHz.
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