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To solve the electromagnetic impedance matching issue, microwave absorption materials are usually composed of magnetic and dielectric components with heterogeneous interfaces at micro/nanoscales.
We had investigated the hybrid polymer composite materials consisted of conductive and dielectric components [19, 20].
From the continuity of the dielectric displacement in the parallel direction explained above, we can find the overall displacement by averaging the displacement field contributions from the metallic and dielectric components: D ∥ = ρ D m ∥ + 1 − ρ D d ∥ (9).
Photonic crystals are artificial structures that have periodic dielectric components with different refractive indices.
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A decrease of tunability and permittivity when increasing the concentration of the dielectric component in composites with randomly distributed phases and in ones with 0 3 connectivity (paraelectric inclusions in a dielectric matrix), often reported experimentally, was obtained by this approach.
One should note if εf is very small, as it is in the complex dielectric component for water (from 0.1 to 1 μm), large rounding errors may occur when using this approach.
Metals would be one of the best options since they are more reflective than dielectric or semiconductor materials over a broad range of frequencies, due to their imaginary dielectric component that exists in even the optical and near infrared regions, where metals are dispersive and absorptive in these frequency regions [6 8].
Hybrid films with various compositions were investigated, and the results showed that the field-effect mobility of the OTFTs was dominated by the high dielectric constant component ZrO2.
The real and imaginary components of dielectric constants, dielectric dissipation factor, dielectric strength, AC conductivity and s frequency exponent parameter have been determined.
Three density prediction models were developed based on the relationship between the asphaltic mixture volumetric characteristics and the components' dielectric constants.
The paper thus acted as the dielectric between the components of each transistor, as well as being the substrate for the circuit, in the same way that the base of a silicon chip acts both as substrate and as dielectric.This approach lets the transistors be both flexible and cheap to produce.
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