Sentence examples for dielectric buffer from inspiring English sources

Some researchers employed different dielectric buffer layers to study the band alignment of the ZnO/p-Si heterojunction [16-18] [16-18]

Theoretical design parameters and experimental data are presented for two sensor designs, using either magnesium fluoride or Teflon AF-1600 as a dielectric buffer layer.

Advances in Y Ba Cu O coated thin film tape may allow narrow filaments with very high current density on a thin metal alloy substrate which is separated from the superconductor by a dielectric buffer.

The main principle of operation of this device is based on high efficiency energy transfer between a p-polarized guided mode propagating in a waveguide layer of the structure and the SPP propagating in the opposite direction in a metal layer separated from the waveguide layer by a dielectric buffer.

Highly c-axis-oriented BTO thin films reported before are grown on either a single-crystalline oxide substrate or with a preferentially oriented thick (>100 nm) conductive or dielectric intermediate buffer layer[13, 15].

Another equally efficient polarizer can be designed by positioning a dielectric (same as buffer) layer (superstrate layer) above the metal film and then optimizing the buffer, metal and the superstrate thicknesses.

With an anodization SiO2 film as a buffer layer, Al2O3 dielectric was grown on it by oxidizing an ultra-thin aluminum film in nitric acid, followed by a surface DAC-ANO compensation.

The changes in internal structure, molecular ordering and morphology of 20 nm thick CuPc thin films have been investigated by modifying surface of the dielectric substrate with various organic buffer layers at different deposition temperatures.

Measurements were performed at 25°C in a Zetamaster instrument using the PCS 1.27 software (Malvern Instruments Ltd., Malvern, UK) and the settings of aqueous solutions (viscosity = 1,002 cP; dielectric constant = 80,4), either in plain buffer or in buffer supplemented with poly-L-lysine (MW 14600, Sigma-Aldrich Química, S.A., Madrid, Spain).

The films deposited with a 7-nm buffer layer show a dielectric constant of 270, remnant polarization of (2Pr) 3 μC/cm2, and coercive field (Ec) of 60 kV/cm, whereas the BTO film deposited on an 8.9-nm buffer layer shows a 2Pr of 5 μC/cm2 and Ec of 100 kV/cm.

Many attempts have been applied to modify the interface of gate dielectric and organic semiconductor, such as inserting buffer layer, molecular self-assembly, and UV/ozone (UVO) treatment [7 9].