Exact(17)
In this work different designs of headspace devices were studied.
In order to improve the efficiency, various fill factor devices were studied.
In order to gain further insight into the charge transport mechanism, the charge transfer processes in the perovskite devices were studied in detail.
3D devices were studied with 4 GeV positrons at DESY and 120 GeV pions at the SPS at CERN.
Plasma focus devices were studied in order to identify the design parameters and logical relationships that exist among device components.
Some thinner SOI devices were studied, reaching from 200 nm to uni-atomic layer of Silicon placed On Oxide.
Similar(43)
Three devices are studied and designed.
Several MEMS devices are studied by the present vLPIM.
The correlation between the characterizations of materials and devices is studied systematically.
The angular sensitivities of the devices are studied and compared with Monte-Carlo predictions.
The morphology of the devices is studied by scanning electron microscopy.
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