Sentence examples for devices under dark from inspiring English sources

Figure 5b shows the EIS results of the two devices under dark in an open-circuit condition.

Figure 5(b) shows the current density-voltage (J-V) characteristics of the BS and AS devices under dark and light illumination at AM 1.5G.

Figure 21d shows repetitive switching of Au-coated ZnO nanorods/FTO memory devices under dark and wide range of wavelength of light irradiation [255].

The numerical results are validated with ATLAS TCAD simulation results of the device under dark condition.

To investigate the photosensing properties of the rectifying Si NW-based device in this case, a broadband white light with the intensity of 825 mwasm2 was vertically shown on the device while the corresponding photoresponse characteristics were recorded, as depicted in Fig. 8a. Figure 8b shows the I-V curves of this device under dark (black curve) and broadband white light irradiation (red curve).

Figure 8 represents the J V curves of prepared hybrid devices attained under dark and 1-sun conditions of (100 mW cm−2).

Figure 5 The photocurrent response of a single-W18O49 nanowire device in vacuum and atmosphere under dark condition.

Figure 3 The I ds – V ds curves of the device coated with SiO 2 under dark ( black curve ) and 312-nm illumination ( red curve ) and without SiO 2 coating under 312-nm UV illumination ( blue curve ), respectively.

The device geometry was proven successful by current voltage measurements of devices in dark and under illumination.

Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation.

The J V characteristics of the Co Ni/MWCNTs based DSSC devices were systemically measured in ambient atmosphere under dark and standard illumination condition (AM 1.5) with an incident light power of 100 mwith2 with an Oriel Sol3A solar simulator.