To understand the difference between the filament and interface types of resistive switching, the area dependence of the RRAM device resistance could be examined.
Additionally, spray duration and shot weight for pMDIs and device resistance for DPI were measured.
The electrical power threshold = I2 × R is derived from the rate equations, where I is the drive current, and R the device resistance.
Device resistance measurements indicated that the type of films, type of device geometry and specific device dimensions significantly affects the airflow resistance of the device.
From these studies, selected prototypes were observed to have improved aerosolization performance without significant increases in device resistance.
The device resistance of the DPIs decreased with increasing altitude and was successfully modeled as a function of ambient pressure.
This increases the spin-dependent resistance as a fraction of the total device resistance and reduces the effect of conductivity mismatch which suppresses spin-injection efficiency.
Moreover, a 2D-FEM (Finite Element Method) model, including the dependence of the GMR device resistance with the magnetic field, has been also developed and simulated.
These include complex impedance measurements to derive time constants; IV curves to determine resistance and power; thermal conductance measurements; noise measurements as a function of device resistance; and direct resistance vs. temperature measurements.
A large number of nonvolatile memory devices have been reported with both inorganic and organic components, and many of these involve changes in device resistance between a high conductivity "ON" state and a low conductivity "OFF" state.
