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Many electronic devices require high mobilities for efficient operation.
High-performance NW devices require high quality NWs with controlled morphology and perfect crystal phase.
However, the above two devices require high charge densities for efficient radiative recombination.
These devices require high resolution displays and optics, fast CPUs, fast GPUs and numerous always-on sensors in order to deliver a meaningful user experience.
These two cardiovascular devices require high power, and thus a high current (0.5 3 A) and high voltage (20 30 V).
Intermediate Risk the device will be in contact with intact mucous membranes or may become contaminated with readily transmissible organisms these devices require high level disinfection or sterilisation.
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The ceramic metal joints for electrical and vacuum engineering devices require high-density alumina ceramic and low glass phase content.
Devices requiring high voltages face the problem of high peak electric field in the vicinity of junction termination.
The results of this study should be able to provide important insights for the design of fabrication processes for MEMS devices requiring high temperature processing of films.
According to several reported results, using Al electrode or Al2O3-based resistive memory devices requires higher operation voltages as well as high RESET currents[12, 44, 45]; however, a few results were reported on low-current operation[6 8, 14].
Implementation of image or video encoders or decoders on mobile device requires high integration densities together with ability for "real-time" (on-the-fly) data processing.
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