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Characteristics of protection devices are explained in this chapter.
Some oxide-based materials for CBRAM devices are explained below.
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From the temperature-variable current-voltage characterization, the gate-tunable electrical characteristics of the devices were explained by a space-charge-limited conduction and a variable range hopping conduction at a low temperature.
The enhanced performance obtained from the bi-layer channel AZO/ZnO TFT devices is explained by the inserted AZO front channel layer playing the role of the mobility booster.
The fundamental working principle for the nanotube-based SA devices is explained in refs (15 and 42). Figure 7 a shows the setup for 1 μm.
Technical aspects such as engineering devices were explained mainly by AA, AM, AI and RC.PH designed the study protocol, carried out the literature review and coordinated the clinical part of the study.
Telemedical devices were explained as measurement equipment which allows patients to transfer data of e.g. weight, blood pressure, or an electrocardiogram via telephone line or Internet from patients' homes to the physicians practice.
The individual Parts for this Device are explained briefly in Table 2 in the file Appendix S1.
The working principle and structure of the device were explained.
The leakage current of the Pt/NKN/Pt device was explained by Schottky emission.
In addition, the principle of supercapattery as a hybrid device is explained with recent literature examples.
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