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In this study, we investigated an Al/Cu/Ge0.5Se0.5/W memory device with improved resistive switching memory characteristics compared to those of an Al/Cu/Ge0.2Se0.8/W device.
In this paper, we focus on the improvement of figures of merit for charge plasma based tunnel field-effect transistor (TFET) in terms of ON-state current, threshold voltage, sub-threshold swing, ambipolar nature, and gate to drain capacitance which provides better channel controlling of the device with improved high frequency response at ultra-low supply voltages.
We propose a new MOS-IGBT device with improved characteristics for high-temperature operation.
After the measurement of fundamental characteristics, we have proposed a new device with improved output performance which generated maximum average power of 963.9 μW at 3 g acceleration at 18 Hz.
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This will enable to design micro/nano scale resonant devices with improved performance.
First, RRAM devices with improved window and reliability thanks to SiOx dielectric layer are discussed.
Baoquan, S., Snaith, H. J., Dhoot, A. S., Westenhoff, S. & Greenham, N. C. Vertically segregated hybrid blends for photovoltaic devices with improved efficiency.
Recent studies have shown that with optimization methods, new devices with improved performance can be easily found.
Proper assessment of geometric features of a thermoelectric generator is important to design devices with improved performance features such as high efficiency and output power.
In order to optimize and improve the design of power devices with improved surge current safe operating area it is necessary to obtain a good correlation between measured and simulated space and time resolved temperature distributions.
The outcomes of the study are expected to reduce challenges to engineer bulk nanostructured materials with specific physical and surface properties for medical devices with improved cellular attachment and response.
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CEO of Professional Science Editing for Scientists @ prosciediting.com