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The performance of the device was studied theoretically and numerically.
The effect of TiO2 NP photoanode thickness on the performance of the DSSC device was studied.
The role of the InGaP buffer on the device was studied.
In summary, we have successfully fabricated HZO-TFT viALDLD, and the effect of Hf-doped ZnO on the stability of device was studied.
In this paper the effect of the protective coating and moulding materials on product level reliability of an electronics device was studied under thermal shock test.
Then, chronoamperometric and voltammetric measurements were considered, and the rate of current increase as a plug of FcMeOH is injected into the device was studied for both cases.
Similar(49)
One device being studied is a sensor no larger than a sugar cube that contains all the wireless communications and data storage circuitry along with the power supply.
The behavior of the fuse device is studied by means of two different numerical approaches.
This device is studied under the point of view of spatial and temporal dimensions.
The problem of the optimal design of the device is studied.
The rigid and elastic plastic models for the device are studied and compared.
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CEO of Professional Science Editing for Scientists @ prosciediting.com