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Thus, a single Er-CdS NR device was obtained.
By IFFT, the pulse response of the IDT device was obtained.
Thus, a Pd-SnO2 NB device was obtained and its top-view optical image is shown in Figure 1b.
The device was obtained by carving a cantilever out of the cleaved edge of an optical fiber.
With the obtained results, a tool for the design and analysis of a down-scaled catalytic reaction device was obtained.
Furthermore, the density distribution of interface states of the device was obtained from the forward bias I V characteristics.
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The red OEL device is obtained by doping 10% DCM2 in the BCP layer.
The temperature distribution of the device is obtained at 20 °C and 6o °C stage temperature.
The memory-state-dependent PV effect of the Pt/Nd:STO/In device is obtained by the switching voltage.
A good fit to the data output characteristics from a 50-nm CNT channel device is obtained.
A green OEL device is obtained by employing this structure without a BCP DCM2 (x %) layer; a blue OEL device is obtained by using a BCP layer without the DCM2 dopant.
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CEO of Professional Science Editing for Scientists @ prosciediting.com