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The device shows a good Schottky contacting character.
The device shows a coloration efficiency (C.E). of 46.45 cm2 C−1 and reversibility of 98%.
Furthermore, the photovoltaic performance of PD-1 device shows a PCE of 0.58%.
Schematic of the device shows (a) two parallel plate electrodes separated by a spacer defining the chamber.
The sensitivity of the proposed device shows a maximum 46.4% greater than that of a conventional flat tactile sensor.
The device shows a wavelength shift higher than 3 nm for a power consumption of only 0.9 mW.
The device shows a photo-response threshold of ∼1.6 eV and a large open circuit voltage of 0.7 V.
The device shows a negative differential resistance phenomenon which can be controlled by the gate of the zigzag GNR FET.
This new device shows a forming-free bipolar resistive switching behavior, with a low operating voltage of 2 V and long retention time (5 × 10ˆ4 s).
The 10 µm thickness device shows a power conversion efficiency of 5.93% and a Jsc of 12.75 mA/cm2 with 37% transparency in the visible range.
Moreover, the DC characteristics of the simulated device shows a drain current of 900 mA/mm, breakdown voltage of 291 V and transconductance of 175 mS/mm.
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Justyna Jupowicz-Kozak
CEO of Professional Science Editing for Scientists @ prosciediting.com