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In order to evaluate the device performance in both optical and electrical domains, we performed photoelectrical simulation under the platform of COMSOL Multiphysics, which is based on finite element method (FEM) [23].
The impact to device performance in exposing these is examined.
Device performance in the electronic circuits degrades with elapsed time.
The 3D monolithic integration is a promising strategy for achieving technology scaling while enhancing device performance in flexible printed transistors.
We discuss the device performance in relation to the film morphology and contact resistance.
These results show that the reduced contact deposition rate has a strong positive effect on the device performance in polymer semiconductors as well.
Formation of Ohmic contact is crucial for achieving high device performance in two-dimensional (2D) materials based transistors.
We discuss the origin of the improvement in the device performance in terms of dye location in ternary blend films.
Compound SFOPO-CZ exhibits better green device performance, while compound 2SFOPO shows better red device performance in PhOLEDs.
Figure 1c shows the device performance in a saturation regime, in which the carrier density distribution between the source and drain contacts is non-uniform, with a pinch off of the accumulation channel near one of the contacts.
We propose that these local maxima can provide regions of enhanced injection into the semiconductor, thus improving device performance, in particular for the cases when the HOMO is particularly deep compared with the work function of the electrode.
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