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One of the key device parameters is the channel length, L, which is the distance between the two n+-p junctions, as indicated in Figure 9.
The device parameters are listed in Table 1.
Resonance frequency and rotation speed are related to device parameters.
The statistical summaries of their device parameters are also discussed.
Schottky barrier device parameters were stable over the annealing period.
Device variability in the model is defined with change in the device parameters.
In the inset of Fig. 5a, basic device parameters are summarized.
Device parameters used in this simulation are summarized in Table 1.
It is quite comprehensive in its definition of device parameters and also agrees with experimental data.
The detailed ZnO film and device parameters are summarized in Table 2.
Basic device parameters are extracted and shown in the inset of a.
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