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A lifetime prediction must be performed on base of the determined device parameter drifts.
However, it is numerically very demanding and cannot be used for systematic device parameter scans.
The performance of designed structure is described and the optimization of device parameter is performed by using TCAD simulation.
A range of device parameter values that ensure the aircraft is free from shimmy instability for any forward speed within its operating region are identified.
In device design, a narrow emitter and reduced poly single-crystal interfacial oxide are impoly single-crystal minterfacialevice parameter shifts.
Increasing in device parameter variations is the critical issue in very deep sub-micron regime due to continue scaling of the transistor dimensions.
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Table 1: Key device parameters.
Device parameters were measured on Agilent 4155B Semiconductor Parameter Analyser.
To establish relationships between process parameters and device parameters.
The solid lines demonstrate simulations with the previously extracted device parameters.
Table 1: Device parameters of complete solar cells without and with a KF-PDT.
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