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The authors thank L.C. Kimerling and A. Agarwal for providing access to device measurement facilities, Q. Du, P.-c.
An easy extraction parameter method of a simplified model is presented based on the susceptance (imaginary part of the admittance) device measurement which results to be a good figure of merit to characterize RF tunable filters.
F-JW performed part of the device measurement.
S-ML and LJ Wang gave some helpful discussions on the device measurement.
MY and CF carried out the device measurement, analysis, and writing of the manuscript.
Gottschalg et al. [31] and Betts et al. [32] also demonstrated similar effects based on spectro-radiometric and outdoor device measurement data of different technologies.
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Support packages have been designed to enable device measurements.
Device measurements included current voltage characteristics, dark current decay, and spectral response.
Our device measurements show that the higher order derivatives of the transconductance are very sensitive to the gate bias.
By this device, measurements of the charge ratio can be performed for both in parallel, inclusive muons and EAS muons.
The model accuracy is extensively verified by comparing device measurements and simulations under a wide range of operating conditions.
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