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Exact(9)
Therefore, the externally applied voltage to the TS device is increased.
As a consequence the fairness of the multimode LDR/HDR device is increased by using the IAWA algorithm.
Practically speaking, the resistivity of the device is increased when a negatively charged biomolecules species is synthesized with the external surface of an n-type SiNW.
At high frequencies, the gain of the device is increased by about 5 dB over the non-quantum base HBT that this device is based upon.
After optimization of cell parameters conversion efficiency of an optimized device is increased up to 6.42% (with CZTS thickness of 0.8 μm).
The longevity of this device is increased by the incorporation of two syringe ports in the acrylic disk-shaped housing, which allows the addition of islets after surgical implantation of the device (Fig. 5) [18].
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However, with the TiTech M4 and the communication cable installed, the weight of the device was increased and the buoyancy force reduced.
Compared with the resonator without the EDF, the resonant depth and Q-factor of the proposed device are increased by 2.5 times and 14 times, respectively.
Compared with the typical GaN vertical heterostructure FETs without PBL, both of breakdown voltage and average breakdown electric field of device are increased more than 50%.
The half-power bandwidth of the nonlinear bistable device was increased by 5 Hz (15% of the peak power frequency) with respect to the linear counterpart.
However, the risk of inferior stem positioning in the reamed medulary cavity using this centralizing device was increased.
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Justyna Jupowicz-Kozak
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