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The results show light emission from the device for bias voltages exceeding 5.5 V, corresponding to an electroluminescence threshold current of ∼109 nA.
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The agreement with the reference simulation tool is very good as reported in Figure 2(a) for the n-channel device and in Figure 2(b) for the p-channel device for several (Drain) bias conditions (electron and hole mobilities have been calculated using the Canali model [31]).
The work, thus, optimize the device's bias point for RFICs with higher efficiency and better linearity performance.
Multiple linear regression analysis for detection of confounding factors affecting device error (bias) revealed that age (P = 0.57) or skin color (P = 0.1) does not affect the device error (bias); however, there was a very weak correlation between gender and device error (P = 0.01, R = 0.03).
This may have introduced the potential for bias – there is a possibility that study participants would use a device they recognise slightly differently from a new device with which they are unfamiliar.
ID-VG behaviors of the JL NW device for multilevel programming operation with gate biases of 9, 11, and 13 V for 100 ns.
For the 600A device, the reverse bias introduced was as low as 0.5 V, and for 750A, no reverse bias was applied.
Discounting for bias.
For bias.
Look for bias.
For the passivated device, at the bias of 5 V, the rise and reset times were decreased down to be 33.8 and 13.9 s, respectively.
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