Sentence examples for device fill factor from inspiring English sources

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The future application of this materials system in inverted structures needs efforts devoted to morphology control and interface engineering to improve the device fill factor.

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Among all, the highly-fluorescent conjugated polymers such as poly 9,9-dioctylfluorenyl-2,7-diyl poly 9,9-dioctylfluorenyl-2,7-diyl poly 9,9-dioctylfluorenyl-2,7-diyl poly 9,9-dioctylfluorenyl-2,7-diylrsion efficiency (PFO) are positively correlatedemonstratedoping concentration.

The high-resistance transparent (HRT) or "buffer" layer has been used extensively in CdTe thin-film photovoltaics to enable a reduction in CdS thickness while maintaining near-maximum device voltage and fill factor.

The thickness (d) varied from 1.0 to 5 μm and device parameters like fill factor (FF), open-circuit voltage (Voc), short-circuit current density (Jsc) and efficiency were studied as a function of the thickness of the absorber layer and the gallium content, x.

The device exhibits a fill factor of 68.58%, an open circuit voltage of 0.86 V, a short-circuit current density of −9.35 cm/malongong with 5.49% power conversion efficiency.

This additional resistance increase the overall series resistance of devices, lowers the fill factor and it is the ultimate responsible for the observed reduced device performance of standard cells in comparison to inverted ones.

In order to improve the efficiency, various fill factor devices were studied.

Accordingly, solar cells with 3T-C60/P3HT 3T-C60/P3HTve laser have an increased shortheircuit current density owing to improved exciton dissociactiveefficiency, but 2TTT-C60/P3HT devices have a boosted filayerctor, owing to thaveormanincreasedss obstructed pathways for the transport of currentcarriers.

We found a linear relationship between the sheet resistance of the ITO layer and the series resistance of the corresponding device, which strongly influences the fill factor.

The results show that when the I2 concentration of the electrolyte was 10 mM, the short-circuit current density, open-circuit voltage, fill factor, and device conversion efficiency of the cuprous oxide-electrolyte heterojunction solar cell were 3.52 mA/cm2, 0.64 V, 0.32, and 0.72%, respectively.

Back-thinning of CMOS devices can possibly increase the fill factor to 100%, improve spectral sensitivity, and allow for the deposition of anti-reflective coatings after fabrication.

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