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The FET device exhibits a 107 on/off ratio, confirming the semiconducting nature of the C2N-h2D crystal.
The device exhibits a high current gain of 1700 and a BVCEO of 1.8 V.
Thus, the Ag/PIN device exhibits a better performance than the Ag/NIP device.
In addition, the assembled FASCs device exhibits a remarkable electrochemical performance with excellent rate capability.
The device exhibits a typical rectification behavior with turn-on voltage of ~ 3 V.
Moreover, this device exhibits a low dark current density of 17 patcm2 at zero-bias.
The device exhibits a peak power density of 70 mW cm−2 at room temperature.
Amongst all VAWT designs, H-rotor, being a lift-driven device, exhibits a high power coefficient.
The resulting orange homojunction device exhibits a maximum current efficiency of 30.0 cd/A and low efficiency roll-off.
The device exhibits a response stable over time and can operate in a broad range of relative humidity.
The device exhibits a resonance mode around 1550 nm wavelength and provides an index sensitivity of 720 nm/RIU.
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