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Additionally, the device exhibited a maximum power of 469.4 kW kg−1.
This device exhibited a field-effect mobility of 10 cm2V−1s−1, which is ~ 3x greater than the best mobility reported for this material in this geometry and with Cytop as dielectric49.
The best-performing device exhibited a PCE of 4.25%, a Voc of 0.69 V, a Jsc of 17.46 mA cm 2, and a FF of 34.65% with no hysteresis (Fig. 4b, c, Table 1).
Under optimization, the achieved low-temperature PVSC device exhibited a champion conversion efficiency of up to 10.33%, with excellent repeatability and negligible hysteresis.
The device exhibited a stable potential window of 1.5 V and excellent cycling stability with only 11.5% decrease of capacitance after 10 000 cycles.
Moreover, the assembled device exhibited a maximum volumetric energy density of 4.05 mWh cm−3 and a maximum volumetric power density of 268 mW cm−3.
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Thus, the PTHBI-based non-doped device exhibited an emission peak at 460 nm, which is bluer than the emission peak (476 nm) for the PTHPI-based device.
The results revealed that the sensing device exhibited an excellent and highly reversible response to different concentrations of NH3 gases.
This device exhibited an on/off ratio of more than 104 and on-currents as high as 150 μA/mm-metrics that are on par with other printed CNT-TFTs.
The FET device exhibits a 107 on/off ratio, confirming the semiconducting nature of the C2N-h2D crystal.
Thus, the Ag/PIN device exhibits a better performance than the Ag/NIP device.
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