Sentence examples for device element from inspiring English sources

The memristor was proposed theoretically in 1971 as the fourth basic electrical device element alongside the resistor, capacitor and inductor.

This renders a promising path for core-shell structured solar cell with higher efficiency yet reduced material per device element.

Second, because the magnetic state is a local property of the material, the ferromagnetic device element must be capable of communicating its state to the outside world, preferably in a nondestructive way.

In this design, each device element was based on a suspended, crossed nanotube geometry that leads to bistable, electrostatically switchable on/off states.

All samples were subsequently sent to an accredited external laboratory specialized in trace metal analysis and analyzed for concentrations of cobalt and chromium by high-resolution inductively coupled plasma mass spectrometry using a commercially available device (Element; Finnigan-MAT, Bremen, Germany).

Design considerations of the device elements are indicated.

Using magnetic engineering, this property must be used to construct device elements with appropriate, stable magnetization states.

Crommie and Fischer hope to use this new type of nanoribbon to eventually create new device elements – such as diodes, transistors, and LEDs – that are smaller and more powerful than those in current use.

In order to interconnect device elements or layers on the flexible substrate, the width and conductivity of metallization lines are very important for minimizing the size of flexible electronic devices.

In this regard, development of a general strategy to present nanoelectronic device elements, such as the kinked silicon nanowire field-effect transistor (nanoFET 10, in a free-standing probe structure could expand substantially the capabilities and applications of these devices in electrophysiology.

In addition, the geometry of nanowires enables them to function as active device elements and interconnects, which can lead to highly integrated optoelectronic device structures.