Sentence examples for device depending on the from inspiring English sources
This method combines barrier measurements of encapsulating materials with accelerated lifetime experiments of encapsulated cells and enables to establish the barrier levels necessary to ensure the protection of a given device depending on the intrinsic stability and targeted lifetime.
A model that takes the diffraction of the beams into account was developed to characterize the red beam generation performance of the device depending on the parameters: the relative strength of these processes, the length of the crystal, the average pump power, and the pump beam waist radius.
There's also a beefy 3140 mAh battery on board, which should outlast the current device depending on the power requirements of the display.
The static power of a circuit varies from device to device depending on the insulation capabilities of transistors and represents the power consumption when the transistor is not in the switching state [25].
By knowing this parameter, it is possible to increase the effectiveness of the treatments, thanks to the possibility of predicting the response of the device depending on the working configuration.
All of this tracking raises privacy issues of course, but Bairstow says most of his company's location technology is completely opt-in and configurable on the device, depending on the device of course.
The ultimate test of the usefulness of a drug or device depends on the determination of outcomes, ideally in randomized clinical trials (RCTs) of sufficient scope and duration.
Successful track reconstruction in a silicon tracking device depends on the quality of the alignment, on the knowledge of the sensor resolution, and on the knowledge of the amount of material traversed by the particles.
Two limiting cases for the geometry of the proposed spectrometer are considered and for both of them the energy resolution of the TOF device depends on the combined time resolution of electron detector and readout electronics.
Analytical models have been derived to show that the subthreshold swing and the threshold voltage of the proposed device depend on the thicknesses of ferroelectric insulator and gate oxide, and the doping profile of the silicon body.
