The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.
In the case of GAA nanowire FET, its substrate is floating and this renders the absence of the parasitic bipolar junction transistor dissipation path in the device, and thus no snapback behavior is expected during the nanowire device breakdown.
Consequently, transport electrons supposed to be confined within the 2-DEG channel would easily spill or leak into the buffer layer, causing a rapid increase of subthreshold drain leakage currents, accelerating the device breakdown.
The introduction of AlGaN/GaN/AlGaN QW EBL leads to a better confinement of transport electrons into the 2-DEG channel, resulting in a reduction of subthreshold drain leakage current and a postponement of device breakdown.
Furthermore, the more frequent the filament over formation/rupture happens, the more unstable the current-voltage curve within, thus making it much more possible for RRAM device breakdown and degrading in continuous write/erase process.
Additionally, due to the large electric field induced at the interfaces of AlGaN/GaN/AlGaN QW EBL, the potential decline of structure C in the conduction band (marked by the light-blue rectangle) with the increasing of Vds is less pronounced, considerably postponing the device breakdown.
In a device breakdown by age, aggregating the data from France, Spain and the U.K., BlackBerry also makes a strong showing in the 16 to 24 year-old age group, with close to half (47 percent) of BlackBerry owners falling in this age bracket — but less than a third (28percentt) aged 25-34 and a mere 12percentt aged 35-49.
(There's even a line uttered, at a key moment, about the device's breakdowns).
This work aims to study the device hard breakdown and performance degradation under HBM equivalent ESD stress.
It will become a valuable tool to analyze device internal breakdown properties and find out optimized ESD/EOS conditions.
