Sentence examples for device breakdown from inspiring English sources

The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

In the case of GAA nanowire FET, its substrate is floating and this renders the absence of the parasitic bipolar junction transistor dissipation path in the device, and thus no snapback behavior is expected during the nanowire device breakdown.

Consequently, transport electrons supposed to be confined within the 2-DEG channel would easily spill or leak into the buffer layer, causing a rapid increase of subthreshold drain leakage currents, accelerating the device breakdown.

The introduction of AlGaN/GaN/AlGaN QW EBL leads to a better confinement of transport electrons into the 2-DEG channel, resulting in a reduction of subthreshold drain leakage current and a postponement of device breakdown.

Furthermore, the more frequent the filament over formation/rupture happens, the more unstable the current-voltage curve within, thus making it much more possible for RRAM device breakdown and degrading in continuous write/erase process.

Additionally, due to the large electric field induced at the interfaces of AlGaN/GaN/AlGaN QW EBL, the potential decline of structure C in the conduction band (marked by the light-blue rectangle) with the increasing of Vds is less pronounced, considerably postponing the device breakdown.

These interventions include device breakdowns, contradictory information, and false feedback.

It will become a valuable tool to analyze device internal breakdown properties and find out optimized ESD/EOS conditions.

This work aims to study the device hard breakdown and performance degradation under HBM equivalent ESD stress.

Various pulse current levels are first applied to obtain the critical stress level that causes the device hard breakdown, i.e. the condition at which the maximum temperature in the device structure exceeds the melting point of silicon.

However, both switching modes require current compliance in the SET process to protect the device from breakdown and, in the case of filamentary switching, to achieve multiply lower resistance states.