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Figure 3a illustrates the endurance property of the memory device at room temperature.
(a) Current voltage (I-V) curve of the Pt/SiO2/TiN sandwich device at room temperature without resistive switching characteristic.
The sensitivity of our device at room temperature was better than the reported literature values at 400°C [2].
Figure 13 Data retention characteristics of Ru/Lu 2 O 3 /ITO ReRAM device at room temperature and 85°C.
The linear I ds V ds curves seen in the low-voltage region indicate good ohmic contacts in the device at room temperature.
Fig. 9 The data retention characteristics of the memory device at room temperature after 5 ms programming at 14 V and 300 ms erasing at −15 V.
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Figure 6 Retention behaviors for the JL and IM NW SONOS devices at room temperature.
Furthermore, providing materials with wide bandgaps allows operation of power devices at higher temperatures and gives lower thermal noise to low-power devices at room temperature [32].
It is worth noting that the MR ratio in C60 based devices is around one order of magnitude larger than that of C70 based devices at room temperature.
At (a) flat-band condition and (b) under program mode. Figure 9 shows the retention characteristics of different Ge NCs memory devices at room temperature.
Fig. 5 On-bias resistance ratio versus stress time for a TaO/HfO x and b TaO/AlO x devices at room temperature.
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