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Figure 8 I - V curves of the Zr/CeO x /Pt memory device are displayed in double-logarithmic scale.
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The STDP curve of the same device is displayed in Fig. 3b.
The typical dark current voltage characteristic of G/n-Si heterojunction device is displayed in the top inset of Figure4.
The schematic diagram of graphene-on-silicon Schottky device was displayed in Figure1. Figure 1 Schematic diagram of a graphene-on-silicon device.
The number of successful tracheal intubations for each device is displayed in Table 1.
The current density-voltage (J-V) characteristics of the fabricated OPV devices are displayed in Figure 7.
In the on-screen user interface, the registered devices are displayed in a list and can be controlled by user interaction.
Baseline characteristics of the 40 patients (35 males, 87.5 %) who were supported by Impella 5.0 device for refractory CS are displayed in Table 1.
In order to clearly understand the working mechanism of devices, the energy band diagrams are displayed in Fig. 4 (the inset in the figure shows the location of cutline).
The device structure is displayed in Fig. 10a inset and the I V curve at reverse and forward bias is illustrated in Fig. 10.
The resulting device configuration is displayed in Figure 2. The housing volume documented by earlier developments is 277 cm to 402 cm [ 4, 12].
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