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Standard deviation of Ioff.
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The results of the normalized standard deviation of Ion and Ioff imply that the advantage of the vertical channel in the suppression of ITF will be weakened when the level of Dit is increased; for example, the ellipsoid-shape distribution of Ion and Ioff is broadened as the Dit increases.
Standard deviation of Ion.
However, such strength is destroyed with the increasing level of Dit; as listed in the inset tables, the normalized standard deviations are considerable and comparable between the two devices for the cases of high Dit, in particular, the σ/μ of Ioff. Figure 2 I D - V G curves of the studied devices with different D it levels.
Moreover, the double gate TFT shows good promise for the enhancement of ION/IOFF, especially by the control of IOFF in devices with poor top interfaces.
However, unlike the OFETs consisting of p-type semiconductors, the decrease of on/off ratio was caused by the decrease of saturation current Ion, rather than the increase of Ioff.
The insets of Figures 3, 4, 5, 6 listed the fluctuation magnitudes of Ioff and DIBL which are severely governed by RITs with high Dit level ranging from 5 × 1012 to 5 × 1013 eV−1013−2.
"Standard deviation of 14.4 points?
The study warned that "while an approximate deviation of 10percentt may not be clinically significant, the larger deviations in this study could be hazardous" in some cases.
Deviation of each property.
Standard deviation of Vth.
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