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This paper surveys the design of memory architectures for 3D CMPs.
Our improvement of the switching characteristics of this resistive memory device will aid in the design of memory stacks for practical applications.
A conclusion is drawn that the design of memory chips based on the molecular analogue memory cell is promising.
The minimum memory requirement of the application is acquired from the diagram and guides the design of memory subsystem.
The design of memory units addresses two critical problems in spatio-temporal learning, namely error tolerance and memory forgetting.
Attention is focused on the design of memory state feedback controllers such that the resulting closed-loop system is asymptotically stable and an adequate level of performance is also guaranteed.
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Generally the design of the memory cell, as an electrically erasable programmable read-only memory, is based on the calculation of coupling ratio.
Also the design of SONOS memory based on high-k dielectrics is promising for terabit scale using hot carriers injection EEPROM and DRAM memory.
Another area of operating-system research has been the design of virtual memory.
Figure 25 Schematic design of a memory device consisting of a thin DNA biopolymer film sandwiched between electrodes.
This logic element enables low voltage operation for high density circuit design of embedded memory.
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