Sentence examples for depth of the trap from inspiring English sources

For the temperature lowering from 180 to 100 K, the depth of the trap state increases gradually.

The I-V characteristic of the SCLC theory can be expressed as I ∞ V M, where the exponent M (≥1) is directly related to the depth of the trap state distribution under the conduction band.

Generally, the depth of the trap, either in the potential (U) or in energy (i.e. qU, assuming that the charged particle has a charge q), decreases rapidly with increasing height (in z direction).

The expression for current density according to the Poole-Frenkel emission can be written as [16]: J FP = a E ox exp b E ox 1 / 2 − φ t q / k b T, where Kb, T, a, b, and φ t are the Boltzmann constant, the measurement temperature, a constant that depends on the trap density, a constant that depends on the electric permittivity, and the depth of the trap potential well, respectively.

Nevertheless, the results mentioned later confirm that the remaining depth of the traps is still deep enough to trap individual or cluster of the charged micro-particles.

Note that during the early part of the winter, the depth range of DVM (shallower than 100 m) was above the depth of the traps moored at 100 m.

The occurrence, population, and depths of the traps determine the pathway that the electron hole pairs (i.e., exciton, e−/h+) generated by irradiation will follow during emission.

However, the occurrence, population and depths of the traps determine the pathway that the electron hole (e-/h+) pair generated by the absorption of light will follow, i.e. recombine and produce the emission of light and/or undergo non-radiative decay.

For GYAGG Ce3+-Cr3+ persistent phosphors, the depth of the electron trap formed by Cr3+ was remarkably changed from 0.27 to 0.69 eV by varying the Gd and Ga contents.

Moreover, P-TiO2 WO3 P-TiO2 WO3showed strong surfacomposite showed which were abstrongn R-TiO2–WO3 composurfacethis informacidicisitesnificant to understand the depth of the electron trapping states.

The depth of traps, associated with trap levels located inside the band-gap, was determined from TL data using different methods of glow curve analysis.