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Average depth of etching (μm).
Pore body depth of etching (μm).
Pore throat depth of etching (μm).
Moreover, the cross-sectional area of each layer ((A_{i})) varies due to the different depth of etching (Table 1). .
The justification for this fingering phenomenon is related mainly to the adverse mobility ratio between the displacing and displaced fluids as well as the microheterogeneity of the glass micromodel used, which is represented by the variable pore body, pore throat, and depth of etching within the layer (Table 1).
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Darcy's flow velocities of the displacing fluid, which were used later to calculate capillary numbers, were calculated using the following equation: u_{i} = frac{{q_{i} }}{{A_{i} }} = frac{{q_{i} }}{{left( {W.D_{{{text{etc}},i}} } right)}}, (8 where "i" is the layer index and D etc,i is the arithmetic average of both pore body (PBDetc) and pore throat (PTDetc) depths of etching.
To understand the dependence of the relative etching depth on etching time, the pre-processed and unprocessed areas were etched with KOH solution for 10, 15, 20, 25, 30, and 40 min.
The greatest etching depth obtained after 512 scans was 50 nm at the lowest load of 1 μN.Figure 6a shows the dependence of etching depth on the pre-processed load.
Figure 14 Dependence of relative etching depth on etching time at different loads.
Figure 2 Variation of etching depth of Si/Si 3 N 4 sample with etching period in HF solution.
We also evaluated the dependence of etching depth on KOH solution etching time[26].
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