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The absorber layer in this work is deposited using the pulsed laser deposition technique (PLD).
epitaxial layer deposited by plasma-enhanced chemical vapor deposition technique.
Subsequently, 4.7 nm of HfO2 were deposited by metal organic chemical vapor deposition technique.
All samples were deposited by plasma-enhanced chemical vapor deposition technique.
In molecular beam deposition technique used ethylene gas source which deposited on a nickel substrate.
Magnesium germanide (Mg2Ge) thin films were deposited on MgO (001) substrates using pulsed laser deposition technique.
Pd NPs are deposited on GCEs by using a gas phase cluster beam deposition technique.
The antireflection layer is typically an oxide of silicon, tantalum, or titanium that is formed on the cell surface by spin-coating or a vacuum deposition technique.
liquid-phase deposition technique.
(b) LbL-E deposition technique.
chemical vapour deposition technique (CVD).
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