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SEM observation showed that the deposition reaction took place selectively at the grain boundaries and Tl2O3 deposited on the grain boundaries did not cathodically redissolve.
Nanostructured thin films of tungsten, vanadium and titanium oxides were deposited on gas sensor substrates from the electric field assisted chemical vapour deposition reaction of tungsten hexaphenoxide, vanadyl acetylacetonate and titanium tetraisopropoxide respectively.
Deposition reaction occurred uniformly on the surface of NPG.
The mechanism of ZnO ALD is the chemical vapor deposition reaction.
The transcribed replica films are applied to the liquid phase deposition reaction.
The increase in current density when increasing the bath concentration indicates that the deposition reaction was originally mass transfer limited.
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Finally, the cathodic deposition reactions were studied by cyclic voltammetry.
We report on the first electrical characterizations of single-crystalline TiSi nanowires (NWs) synthesized by chemical vapor deposition reactions.
It is proposed that different deposition reactions dominate in different stages of the plating process.
A model for pore structure changes caused by solids deposition reactions in a catalyst pellet is developed.
The deposition reactions were mainly controlled by BCl3 + NH3 under 900 °C, and by SiCl4 + NH3 over 900 °C.
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