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The deposition rate of the Cr films deposited by DOMS with increasing peak power decreases from 60 to 30% of DCMS deposition rate.
It furthermore increases the deposition rate significantly.
The deposition rate was approximately 1.25 Å per cycle.
Deposition rate is linear to atomization time.
To optimize the deposition rate the correlation between beam parameters and deposition rate was studied.
The measured deposition rate was highly consistent with the deposition rate estimated analytically for weak evaporation.
Tsuchida, H. et al. Characterization of 4H-SiC epilayers grown at a high deposition rate.
The rf power was 100 W and the deposition rate was approximately 0.2 Å s−1.
During these evaporation steps, the deposition rate was monitored by a quartz crystal microbalance.
The deposition rate is monitored by a calibrated frequency thickness monitor.
For recipes, deposition rate, and film properties information you can view our process development file.
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