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The other Ge quantum well layers and Si spacer layers were deposited at the same deposition temperature and with the same deposition amount.
(b) Increased deposition amount effect.
d Average reflectance with respect to the deposition amount.
Thus, the growth duration was increased with increased deposition amount.
Thus, the deposition amount was improved by 15% and the hardness increased by 11%.
n Summary plot of average reflectance with respect to the deposition amount.
b m Samples with Pd nanostructures with the deposition amount as depicted.
f h Summary of AH, AW, and AD with respect to the deposition amount.
Figure 6 Extended annealing duration and increased deposition amount effects and AFM side views.
g RMS roughness (R q) with respect to the deposition amount.
The slight increase of the InAs deposition amount dramatically deteriorates the PL properties.
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