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The TiO2 Cr films were deposited at approximately 550°C, with a thickness of about 120 nm.
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Although the quality of the low-temperature (LT) SiO2 layer is not as good as that deposited at higher temperature (approximately 300°C), the quality was found to be acceptable and did not affect the refractive indices of SiO2[9].
WS2 and Cr WS2 nanocomposite coatings were deposited at different Cr contents (approximately 15 50 at.%) on silicon and mild steel substrates using an unbalanced magnetron sputtering system.
The hardness and Young's modulus for a single TaN layer deposited at 150 W were approximately 26.0 and 237.1 GPa, respectively.
Cu, which provided mobile ions, was deposited at a layer thickness of approximately 50 nm by a thermal evaporator.
RF power was set at 150 W. The growth rates of GDC thin films deposited at 100°C and 500°C were approximately 42 and 20 nm/h, respectively.
ZnSe was deposited at a base pressure of approximately 10−4 Pa for 30 min. The deposition of ZnSe coatings were performed at room temperature (RT) or at an elevated temperature of 500°C.
Results of investigations on thin films of titanium oxide are presented in which the layers were deposited at a very high deposition rate of approximately 50 100 nm/s.
The carrier life time is low when deposited at a temperature of 150°C to approximately 250°C.
The six-pair 3 nm InGaN/9 nm GaN MQWs is subsequently deposited at the temperature of 620 to approximately 640°C.
Furthermore, a shallow groundwater hosted in the alluvial deposits (at approximately 2 m below the surface plane) is present in the site.
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