Sentence examples for dependence on thickness from inspiring English sources

Structural, electrical, and optical properties dependence on thickness of ZnO films has been investigated.

Lower mobility HTL materials show larger operating voltage dependence on thickness.

In dependence on thickness of the thin metal layers, thermal pre-treatment or hydrogen plasma etching and plasma parameters during the deposition process different carbon nanostructures, especially regarding tube diameter, morphology and arrangement could be proved.

Parametric reduced-order models developed previously have two important challenges to overcome to improve accuracy and performance: (a) the transformation matrix is not mathematically stable and (b) the Taylor series parameterization techniques do not capture thickness variations of the structure modeled with solid-type elements due to the highly nonlinear dependence on thickness changes.

The intercept for the minimum thickness, B min, could therefore be fitted (shown in Fig. 5b – yellow) and written as: where the coefficients S1, S2, S3 can be determined through a linear dependence on thickness (Eq. (10)).

Interfacial stability with respect to misfit dislocation formation, the dependence on substrate thickness of a thermodynamic critical film thickness, and the completion of the coherent-to-semicoherent interfacial transition are examined in detail.

It was found that maximum tensile load and ultimate tensile stress show only slight influence from gas channel design and part thickness except Nylon parts which exhibit significant dependence on part thickness due to degree of crystallinity.

We report organic light emitting devices (OLEDs) with weak drive voltage dependence on the thickness of the hole transport layer (HTL) for thicknesses up to 1150 Å using the N,N′-Bis naphthalen-1-yl -N,N′-bis phenyl -benzidine (α-N,N′-Bis naphthalen-1-yl -N,N′-bis phenyl -benzidine1′-bipheN,N′-Bis naphthalen-1-yl -N,N′-bis phenyl -benzidinelities iN,N′-Bis naphthalen-1-yl -N,N′-bis phenyl -benzidine

Our results further showed that the LPE exhibited obvious dependence on the thickness of the MoS2 films and about 30.0 nm was the optimum thickness of the MoS2 film to acquire the highest LPE in the fabricated MoS2/n-GaAs heterojunctions.

Moreover, the MD simulations also reveal the size-dependent yield stress of NHCs, while the Young's moduli show no obvious dependence on the thickness of the cell walls.

The aging of freestanding thin films of polysulfone is rapid and exhibits clear thickness dependence, whereas the aging of multilayered films was observed to be similar to bulk and showed no dependence on layer thickness.