Sentence examples for density of interfaces from inspiring English sources
The optimum thickness of the absorber, the effects of the absorber quality, the defect density of interfaces, the effects of VBO and CBO, the interface contact at front and back electrodes were analyzed.
Interactions between metals and oxides are key factors to determine the performance of metal/oxide heterojunctions, particularly in nanotechnology, where the miniaturization of devices down to the nanoregime leads to an enormous increase in the density of interfaces.
The low thermal conductivity in the nanostructured composite is attributed to the high density of interfaces caused by the small grain diameters (30 60 nm), along with the strong acoustic mismatch between Cu2Se and carbon phonon states which enhances the thermal boundary resistance.
A potentially enhanced radiation resistance of nanocrystalline materials, as a consequence of the high density of interfaces and surfaces, has attracted much attention both to understand the fundamental role of these defect sinks and to develop them for high-radiation environments.
Nanoporous materials with high density of interfaces offer an alternative to superlattices as potential thermoelectric materials [3], because the presence of closed or connected pores in porous materials provides an effective scattering mechanism for mid- and long-wavelength phonons that contribute heavily to TC [4].
This noteworthy result rationalizes the success of the induced density of interface state model in correctly reproducing the interfacial energy level alignment in the limiting case of atomically clean metals with intermediate work functions, despite it considering only monolayer coverage.
Higher density of interface states for SiO2 than Si3N4 passivation is supposed to be responsible for these effects.
By using the impedance spectroscopy analysis, we found that the inverted device architecture has higher values for the interface trap time constant and the density of interface states.
We show that alternative passivating rare earth oxide layers prepared by molecular beam deposition produce improved electrical characteristics and a significant reduction of the density of interface states.
