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This study demonstrates the electrical detection of protein binding by the introduction of Au nanoparticle antibody conjugates in a carbon nanotube field effect transistor (CNTFET), in which the nanoparticle-functionalized carbon nanotube serves as the electrical conducting channel.
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Neuroblastoma NG108 and rat primary peripheral neurons produced high voltage-activated currents when electrically stimulated through conductive SWCNT films, demonstrating the electrical coupling of SWCNTs and neurons.
In this work, we demonstrate the electrical behavior of carbon films fabricated by methane arc discharge decomposition technique.
As shown in the inset image of Figure 8b, the I-V characteristic demonstrated the electrical conductivity of the GOS-based electrical circuit was improved after chemical reduction.
A conventional four probe analysis demonstrated the electrical conductivity of the films in the semiconductor range (~ 10− 5 S/cm).
C V and J E characteristics are used to demonstrate the electrical behavior of fluorine implantation-based MOS devices.
Wei et al.[21] used the electron-beam-induced strategy and Wang et al.[22] applied the noncovalent functionalization method to dope carbon (C) into the h-BNNTs, which demonstrated the electrical conductivity increased with the C content.
First, we demonstrated the electrical control of supramolecular helical structure and lasing action from the CLCs, which were comprised of an optically active agent and an achiral nematic liquid crystal, doped with a small amount of a fluorescent dye.
This study demonstrates the relevant of electrical resistivity survey in the investigation of the subsurface characteristics which have influence on groundwater repositories and the findings are valuable tools for groundwater management.
This work demonstrates the limitations of electrical resistivity and/or sheet resistance measurements to provide a reliable estimate about the performance of conductive coatings and that emulated lightning strikes are crucial for assessment of lightning protection.
Figure 6 demonstrates the non-ohmic electrical response of the current voltage (I-V) measurements performed in a two-terminal AZO-PS-Si configuration (inset of Figure 6) which is normally attributed to the formation of Schottky barriers at the ZnO-PS interfaces.
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