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The degree to which the energy levels are deformed by strain is quantified by the deformation potential: 1where ε i is the electronic energy level of interest and v is the lattice volume.
h The fitting process of deformation potential constants for 9-aAsNRs and 10-aAsNRs.
where D is the deformation potential, and ρ is the density of the semiconductor material.
This is attributed to the large deformation potential constant E in the As and Sb sheets.
The high deformation potential of the nonwoven fabrics is established.
The electron phonon coupling is treated in the deformation potential model.
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The strain modifies the band structure through the deformation potentials.
At low temperature we found PbSe deformation potentials Du= -2.36 anDu= -2.36
Deformation potentials (Du and Dd) for PbSe where analyzed using transmission data of PbSe/PbEuSeTe multi-quantum wells (MQWs).
Deformation potentials and Luttinger parameters used in the k·p model are those extracted from the TB calculation for bulk InGaAs and GaP[17].
Then, band profiles for QDs and embedding layers depend on the deformation potentials of the relevant materials (InAs for QDs and WLs and relaxed InGaAs for MB).
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