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The constitutional defects were found to be of the anti-site type.
Although none of the defects were found to be detrimental to hydrogen anchoring, only the single vacancy showed promising hydrogen binding in the ideal range.
Stress-life measurements for bending specimens with FIB surface defects were found to be similar to those for bending specimens without defects at the same applied stress amplitude.
The defects were found to modify the electronic structure and the phonons of graphene giving rise to new optical transitions and defect-related phonons.
Almost all the cutting burrs and defects were found to locate on the line with entrance angle is equal to 80° and 170°.
After sonication, spectra measured around localized defects were found to present a broadened LO-TO c-Si band, with a measured full width at half maximum up to ΔFWHM~4.54 cm-1 (see Fig. 4).
Similar(45)
Among three defects, the single Void defect is found to decrease the IFSS while both the TSW and Adatom defects are found to promote interfacial shear load transfer.
The density of the shallow defects was found to increase with increasing concentration of incorporated nitrogen.
In the first case, the point defects are found to be attracted to the substrate surface.
The migration energy of interstitial helium in these defects was found to range from about 0.4 0.5 eV.
The appearance of these defects was found to correlate with molecular weight and thermal history of the samples.
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Justyna Jupowicz-Kozak
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