Sentence examples for defect study from inspiring English sources

A defect study was performed on arsenic-implanted Hg1-xCdxTe (x = 0.23 0.30) films with graded-gap surface layers, grown with molecular-beam epitaxy on GaAs and Si substrates and designed for fabrication of 'p+–n'-type photodiodes.

Such studies have already been performed on energetic materials such as Cyclotrimethylene Trinitramine (RDX) [6,7,12-14], PenTetranitrate Tetranitrate (PETN) [6,7,12,15,16], where deformation by slip is important and by a topographic defect study of 2-4-6 Trinitrotoluene (TNT) [17] where growth twinning and polymorphism influences the defect structure.

For example, AD-MSC genetically modified by bone morphogenic protein 2 (BMP-2) produced a significant increase of newly formed bone in a canine bone defect study [ 14].

Interference between the fixation device and the blood supply and also with the implanted scaffold must be taken into consideration when designing a sheep critical sized defect study.

Because of the bilateral defect study, the bone volume of each defect was compared with that of the contralateral defect in order to determine the percentage changes in bone formation.

Based on the promising results of the rodent abdominal body wall defect study, we aimed to evaluate silk mesh for use in a large ventral body wall defect in a large horse with the hypothesis that silk mesh would minimize postoperative complications and provide adequate biomechanical properties during healing.

In general, use of range imaging is not common in steel surface defect studies.

This technique has been used to carry out defect studies in cold worked zircaloy-2 plates.

In the case of energetic materials, defect studies have assumed more importance since it was proposed that energy localization due to plastic deformation and dislocation pile-up ("hot spots") could contribute significantly to the detonation initialization process [21],[21].

This review covers the most recent trends in CZTS research; (i) alloying with new elements, (ii) exchange of CdS buffer layer with alternative materials, (iii) back contact engineering and (iv) defect studies as a function of compositional variations and annealing.

Electrical characterization and microscopic defect studies were performed on a wide set of diodes made with both n- and p-type float zone and magnetic Czochralski silicon irradiated up to a nominal fluence of 3×1015 cMeV 1 Mequivalenteneutronsoneutrons