Sentence examples for defect orientation from inspiring English sources

It is found that the effect of defect orientation on the electroelastic fields around a void and at the crack tip is rather subtle.

At the same time, model with different kinds of defects were established, and the effective thermal conductivity as the function of defect orientation angle, defect volume fraction and defect shape coefficient was discussed in detail.

The generalized solutions presented in this study can be reduced to the results reported in the literature for special cases of defect orientation, i.e. defects parallel or perpendicular to the poling direction.

Our computed results reveal that all of the defective BNNRs systems can uniformly exhibit nonmagnetic semiconducting behavior, and the formation of the divacancy 5 8 5 defect can significantly impact the band structures of BNNRs with not only the zigzag but also armchair edges, where their wide band gaps are reduced and the defect orientation and position play an important role.

On the basis of the comprehensive first-principles computations, we investigated the geometries, electronic and magnetic properties of zigzag and armchair boron nitride nanoribbons (BNNRs) with the divacancy defect of 5 8 5 ring fusions formed by removing B N pair, where the defect orientation and position are considered.

Burkhart and De Beer [9] suggested defect orientation was more important, differentiating "engaging" from "non-engaging" Hill Sachs lesions.

The map points to a defect of axial (C3v) symmetry where the axial (g //) axis is restricted to only one direction with respect to the sample morphology, i.e., parallel to the MoS2 layer normal n, with potentially allowed other crystallographically equivalent defect orientations in a bulk crystal not occurring.

There were no wing hair defects (orientation or number) or any other noticeable defect associated with the loss of dGIPC either in homozygous animals (even when the maternal contribution was removed), or in homozygous somatic clones.

Additional manipulation to reposition these nanowires on TEM grids can help to meet the in-zone condition and eventually reveal the planar defects and their fault orientations (i.e., AF or TF).

The determination of defects' existence and fault orientations (TF or AF) within each nanowire was based on the characteristic features presented in TEM results, including modulated contrast in high-resolution TEM (HRTEM) images and streaks in diffraction patterns.

An array of well-defined and micrometer-sized circular and line defects were produced on the surface of Zr-based bulk metallic glass bend specimens using a focused ion beam (FIB) in order to study the effect of the defect size, orientation and shape on fatigue damage initiation and growth.