Complications that required surgical intervention occurred with balloon dilation (valvuloplasty, angioplasty, n = 4), device deployment (coils, stents, atrial-septal defect devices, n = 5), transhepatic access (n = 1), and atrial transseptal puncture (n = 1).
Transmission spectra of the originally designed triple-defect device operating within the second SB ( m = 2, Table 1) (black line) and of the fabricated device with structural deviations of ± δ dSi = 20 nm = 5.6% ( m = 2, Table 2) (red line).
Transmission spectra of the predicted ideal triple-defect device (black line) and the fabricated device (red line) operating within ( b) the first order SB with dSi = 325 nm, (c) the second order SB with dSi = 360 nm and (d) the third order SB with dSi = 486 nm.
In this regard, more studies on various issues such as device design, defects, device structural variations, etc., should be done in the near future.
In future, this design may serve as an assessment tool for optimization or detection of local defects and device failure, e.g. in integrated microsystem components.
Such huge clusters have been described by us previously as defects of arrays[29]; we predicted in that article such formations to be able to destroy Ge/Si structures generating high stress fields in Si spacer layers and, as a consequence, introducing extended defects in device structures.
The limitation of testing-personnel quality and testing technology could bring about hidden failures for ignorance of some defects in devices.
Although the three classification methods of hidden failures appear different, all of them think over the classification from hardware and software, and then classified hidden failures by considering detailed factors like human behaviors and design defects of devices.
In this manuscript, we are reporting the efficacy of closure of nonseptal defects with devices conventionally used for septal cardiac defects although they have not been prototyped for use in such conditions.
The results suggest that the state transition of defective nanomagnet element highly depends on defect type and device's aspect ratio, and the defect type Bd needs the largest coercive field, while the defect type D requires the largest null field for switching.
In another case, a software defect caused the device to show an "equipment disabled" message.
