Sentence examples for deep diffusion from inspiring English sources
The engineered structure and unique composition along with define porosity, existence of structure stabilizer counter anions and hydrophilic nature of NWs allow deep diffusion of electrolyte ions.
Moreover, a deep diffusion zone with a well-bonded interface decreased the likelihood of fatigue initiation at (or below) the compound layer interface.
Deep diffusion layer with high hardness up to HV900 below the surface thin compound (γ′-Fe4N) layer was formed in these alloys.
Gettering at 950°C seems to have a bad effect on the electrical properties of the cells, which could be due to the deep diffusion of phosphorus into the mc-Si substrate when annealing the sample at 950°C.
A series of pre-structured fabrication process, including deep diffusion of boron in a high-temperature diffusion furnace, were used to obtain a 50~ 60 μm p-n junction below the final ~ 250-μm-thick device structure.
IPAP employs high cathode currents at low pressures, allowing enhanced flow and controlled energies of the particles bombarding the work piece leading to formation of desired nanostructured nitrides and deep diffusion zones.
Intensity evolution of the core level in XPS indicates that the adsorption of Co atoms is mainly at the surface without deeper diffusion into C8-BTBT layer.
The magnetic enhancement effects of Gd are amplified during inflammatory arthritis where the increase in vascular permeability induced by synovial inflammation allows a deeper diffusion into the tissues.
A fixed mesh was used, with spacing varied to accomodate the deep thermal diffusion during the long time needed for mass diffusion.
The microstructure developed at 600 °C consisted of a thin compound layer (<2 µm) and a deep nitrogen diffusion zone (~45 µm) while the bulk microstructure was maintained with only 40% grain growth.
The area required for the integration of the front-end electronics is mostly provided by the collecting electrode, which consists of a deep n-type diffusion, available as a shielding frame for n-channel devices in deep submicron, triple well CMOS technologies.
