Sentence examples for deep confinement from inspiring English sources

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This limits the modulation speed of QDs with deep confinement potentials such as the 1.3-μm InAs/GaAs QDs.

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The deep quantum confinement effect and biodegradability feature of the porous silicon nanowires may enable interesting applications in optoelectronics and drug delivery.

The capability of guiding light with deep subwavelength confinement is of great interest for practical applications in photonics leading to ultra-dense integration of photonic circuits [5].

A plasmonic cavity based on a dielectric-core/metal-shell nanowire structure can enable deep subwavelength confinement of SPPs in all three spatial dimensions (Figure 1(a)) [2].

We note that the proposed plasmonic cavity exhibits two unique properties: the deep subwavelength-scale confinement of SPPs and extremely low optical radiation loss.

For ultra-thin films, that is, when the thickness is half the incident wavelength or smaller, it can be shown that, to fully exploit the nanophotonics capabilities, the designed structures must yield deep-subwavelength field confinement and/or low group velocity.

The electronic structures of the Al2O3-TiAlO-SiO2 have been studied by X-ray photoelectron spectroscopy measurements, and it reveals that the quantum well and the defect traps in TiAlO film can provide a >1.8 eV deep barrier for charge confinement in the TiAlO layer.

One minute, the nightmare endured by Paul Conroy Ryan Reynoldss), a nonmilitary truck driver in Iraq who is buried alive and held for ransom, is a pulse-elevating thriller that wants to prick your deepest terrors of claustrophobic confinement.

Now 35, she has spent more than a year in jail, often in solitary confinement, sinking deeper into the mental illness that makes it impossible for her either to fight deportation or to obtain the travel documents needed to make it happen, according to a pending habeas corpus petition that seeks her release.

Such high temperature denotes that the carriers need large energy to escape from the deep localization, indicating a strong confinement effect in the localization potentials.

The deep barrier height for charge confinement in TiAlO layer and good insulating properties of the gate dielectric were believed to be the reasons for the excellent retention and endurance properties of the memory device.

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