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The reactor incorporated a weakly ionized DC plasma source that provides continuous surface cleaning of the sample and a RFICP discharge source that supplies a highly reactive environment to enhance the kinetics of nitriding process.
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The characteristic feature of the extended linear DC-plasma source LARGE consists of an up to 300 mm long electrical arc, stabilized by water-cooled copper cascades and a magnetic barrier.
Figure 3 Radial profile of the energy influx of the ion beam source Ø 160 mm, based on measurements as shown in Figure 2. Additional test measurements have been performed in an inductively coupled rf-plasma and a dc-plasma source (APS, so-called advanced plasma source [17]).
In this work, a linearly extended and scalable DC arc plasma source is used for PECVD of silica layers on Ti6Al4V.
Plasma immersion ion implantation (PIII) of nitrogen in silicon (Si) wafers was carried out using a dc glow discharge plasma source and a hard tube pulser.
Titanium and tantalum nitride films (TixTa1 − xN) with different Ti concentrations (0.15 < x < 0.51) were synthesized on bearing steels by ECR-microwave plasma source enhanced DC magnetron sputtering, and the influences of Ti contents on the structures and mechanical properties of TixTa1 − xN films were investigated.
Since, the coloration ability of WO3 thin film deposited with plasma source of pulsed DC was better than those of the DC and RF.
We also improved our plasma source towards a DC, highly stable, medium density glow discharge system.
RF and DC plasma jet sputtering systems were investigated as sources for deposition of ZnO thin films.
In addition to RF and DC sputter sources, pulsed DC and low-frequency plasma sources are gaining increased attention in sputter technology.
Carbon films were synthesized on Si wafer with or without a pulse biasing and DC biasing by a plasma-based ion implantation system using an electron cyclotron resonance (ECR) plasma source with a mirror field and a power supply to apply negative high-voltage pulses and a negative DC bias to the substrate.
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