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The neon energies were adjusted to create a damage profile matching the Mn implantation depth.
Damage profile analysis was in a good correlation with the experimental results.
Damage was caused by a variety of indenters that were specially designed to obtain a desired damage profile.
Damage profile probed by etching the sample was found to be non-uniformly distributed in the implanted sample.
TRIM'98 (Transport of Ions in Matter) code was used to simulate the damage profile in Nd YVO4 by a single and multi energy ion implantation, respectively.
The results simulated by both models accurately predicted the elastic loading response and captured overall damage profile compared with the experimental results.
Similar(41)
Different damage profiles are observed from the blast tests.
Differences in DNA damage profiles induced by DBC and MeDBC were found in V79MZh1A1 and Hep G2 cells.
The damage profiles before and after annealing at 1500 K were compared with those of the carbon implants.
In addition, random and channeling Rutherford backscattering spectrometry (RBS/C) was performed with 2 MeV4He+ions, backscattering angle 167°, in order to establish the experimental Mn distribution and damage profiles.
The damage profiles determined from the channelling RBS spectra can be well represented by the electronic energy loss of the implanted Ar ions.
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