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Open image in new window Figure 1 Schematic diagram of CVD system for SWCNTs growth.
Ar flow was increased to 500 sccm to prevent oxygen from entering the CVD system.
MWCNTs were prepared using CVD system and then sprayed onto SiO2 substrates with air brush pistol.
In this approach, pure S and MoO3 powders are put in a CVD system.
The schematic diagram of CVD system is shown in Figure 1.
Figure 4b shows that the graphene flake was grown on Cu foil under an atmospheric CVD system.
In this study, our homemade CVD system served as an important tool for the TR-MoSx annealing at low temperatures.
An experimental study was also conducted on a CVD system developed in the laboratory, to benchmark the computational results.
This work reports for the first time, deposition of copper via an atmospheric pressure-based plasma CVD system.
Diamond film were deposited on the cemented WC + 6% Co substrates by a microwave plasma chemical vapor deposition (CVD) system.
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All depositions were carried out in an UHV-CVD system with a base pressure of approximately 1 × 10-9 Torr.
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