Modification of SiO2 precipitate formation by defect engineering of SIMOX (separation by implanted oxygen) process was studied using cross section scanning spreading resistance microscopy (SSRM).
(a) High-resolution X-ray diffraction (HR-XRD) and (b) cross section scanning transmission electron microscopy (STEM) image of BiFeO3/La2/3Sr1/3MnO3 (BFO/LSMO) thin films on SrTiO3 (STO) substrates.
Fig. 2 Characteristics of FBAR based on c-axis ZnO film: a the cross section scanning electron microscopy image, the insert is the G-S-G G-S-G G-S-Gu electrode, b the ampatternedon of ZnO piezoelectric film, c the XRD pAutelectrodee device, and d the rocking curve of ZnO (002) peak.
Figure 1c shows a false-colored cross section scanning electron microscopy (SEM) image of the final TiO2/ p-InP heterojunction solar cell.
(b) Cross-section scan profile of an etched trench.
Figure 3G shows a cross-section scan, from the GCL to the PRL, of the flat-mounted retina.
Characterization techniques included scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and cross-section scanning transmission electron microscopy (STEM).
The cross-section scanning electron microscope (SEM) images provide a strong evidence of the formation and annihilation of the metallic filament.
Coatings composition is determined by Rutherford and non-Rutherford backscattering (RBS) and coating thickness is measured by cross-section scanning electron microscopy (SEM).
The morphology, examined by cross-section scanning electron microscopy, changed with increasing tungsten content from a columnar to a fine-grained microstructure.
Scanning electron microscopy (SEM) results confirmed that liquid crystals coated CNC films maintain chiral nematic structure characteristic of CNC film and simultaneously, transversal cross-section scanning electron microscopy images indicated penetration of liquid crystals through the CNC layers.
